DG islanding operation detection methods in combination of harmonics protection schemes. - Saeed Jahdi; Loi Lei Lai (ISGT Europe, 2011)

The impact of silicon carbide technology on grid-connected Distributed Energy resources. - Saeed Jahdi; Olayiwola Alatise; Phil Mawby (ISGT Europe, 2013)

The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs. - Saeed Jahdi; Olayiwola Alatise; Petros Alexakis; Li Ran; Philip Mawby (IEEE Trans. Ind. Electron., 2015)

Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery. - Saeed Jahdi; Olayiwola Alatise; Li Ran; Philip Mawby (IEEE Trans. Ind. Electron., 2015)

Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules. - Saeed Jahdi; Olayiwola Alatise; Jose Angel Ortiz Gonzalez; Roozbeh Bonyadi; Li Ran; Philip Mawby (IEEE Trans. Ind. Electron., 2016)

Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs. - Jose Angel Ortiz Gonzalez; Ruizhu Wu; Saeed Jahdi; Olayiwola Alatise (IEEE Trans. Ind. Electron., 2020)

The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation. - Saeed Jahdi; Mohammad Hedayati; Bernard H. Stark; Phil H. Mellor (IEEE Trans. Ind. Electron., 2020)

Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET. - Juefei Yang; Saeed Jahdi; Bernard H. Stark; Ruizhu Wu; Olayiwola Alatise; Jose Angel Ortiz Gonzalez (IECON, 2021)

Impact of Intrinsic Parameter Dispersion on Short-Circuit Reliability of Parallel-Connected Planar and Trench SiC MOSFETs. - Renze Yu; Saeed Jahdi; Phil H. Mellor (IEEE Trans. Ind. Electron., 2024)