Compact modeling of short-channel effects in symmetric and asymmetric 3-T/4-T double gate MOSFETs. - Saeed Mohammadi 001; Ali Afzali-Kusha; Saeed Mohammadi 002 (Microelectron. Reliab., 2011)

A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement. - Mehdi Saremi; Behzad Ebrahimi; Ali Afzali-Kusha; Saeed Mohammadi 002 (Microelectron. Reliab., 2011)