12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. - Jonathan Chang; Yen-Huei Chen; Wei-Min Chan; Sahil Preet Singh; Hank Cheng; Hidehiro Fujiwara; Jih-Yu Lin; Kao-Cheng Lin; John Hung; Robin Lee; Hung-Jen Liao; Jhon-Jhy Liaw; et al. (ISSCC, 2017)