A 90nm Quadrature Generator with Frequency Extension up to 4GHz. - Bob Stengel; Said Rami (ISCAS, 2007)

Intel 22nm Low-Power FinFET (22FFL) Process Technology for 5G and Beyond. - Hyung-Jin Lee; Steven Callender; Said Rami; Woorim Shin; Qiang Yu; Jose Mauricio Marulanda (CICC, 2020)

A 50 Gbps 134 GHz 16 QAM 3 m Dielectric Waveguide Transceiver System Implemented in 22nm CMOS. - Thomas William Brown; Georgios C. Dogiamis; Yi-Shin Yeh; Diego Correas-Serrano; Triveni S. Rane; Surej Ravikumar; Jessica C. Chou; Vijaya B. Neeli; Jose Mauricio Marulanda; Neelam Prabhu Gaunkar; Cho-Ying Lu; Iwen Huang; et al. (VLSI Circuits, 2021)

A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology. - Qiang Yu; Derek Thomson; Han Wui Then; Alvaro Latorre-Rey; Marko Radosavljevic; Michael Beumer; Pratik Koirala; Nicole Thomas; Nityan Nair; Heli Vora; Samuel Bader; Said Rami (BCICTS, 2022)

A 48dB-SFDR, 43dB-SNDR, 50GS/s 9-bit 2x-interleaved Nyquist DAC in Intel 16. - Hariprasad Chandrakumar; Thomas William Brown; Dimitri Frolov; Zinia Tuli; Iwen Huang; Said Rami (CICC, 2022)

5G mmWave Power Amplifier and Low-Noise Amplifier in 300mm GaN-on-Si Technology. - Qiang Yu; Han Wui Then; Derek Thomson; Jessica C. Chou; Jeffrey Garrett; Iwen Huang; Ibukunoluwa Momson; Surej Ravikumar; Seahee Hwangbo; Alvaro Latorre-Rey; Ananda Roy; Marko Radosavljevic; et al. (VLSI Technology and Circuits, 2022)

Design kit development on a 300mm GaN-on-Si demonstration platform with integrated Si pMOS. - Samuel James Bader; Ahmad Zubair; Alvaro Latorre-Rey; Mikkel Hansen; Soumen Sarkar; Abdul Asif; Dimitri Frolov; Kaushik Narayanan; Jag Rangaswamy; Puneet Kanwar Kaur; Sanjeev Kumar; Nirmal Kundu; et al. (BCICTS, 2024)