Optimization of sub-0.1-mum offset Gamma-shaped gate MHEMTs for millimeter-wave applications. - Min Han 006; Myung-Sik Son; Jung Hun Oh; Bok-Hyung Lee; Mi-Ra Kim; Sam-Dong Kim; Jin Koo Rhee (Microelectron. J., 2004)

Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor. - Seok Gyu Choi; Jung Hun Oh; Bok-Hyung Lee; Byeong Ok Lim; Sung Woon Moon; Dong-Hoon Shin; Sam-Dong Kim; Jin Koo Rhee (IEICE Trans. Electron., 2006)