Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors. - Sami Alghamdi; Wonil Chung; Mengwei Si; Peide D. Ye (DRC, 2018)

Low frequency noise in MOS2 negative capacitance field-effect transistor. - Sami Alghamdi; Mengwei Si; Lingming Yang; Peide D. Ye (IRPS, 2018)

Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage. - Pengfei Dong; Chenlu Wang; Qinglong Yan; Yingming Wang; Jian Wang; Sami Alghamdi; Zhihong Liu; Jincheng Zhang; Hong Zhou; Yue Hao 001 (DRC, 2023)

1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations. - Yitao Feng; Hong Zhou; Sami Alghamdi; Hao Fang; Xiaorong Zhang; Yanbo Chen; Guotao Tian; Saud Wasly; Yue Hao 001; Jincheng Zhang (Sci. China Inf. Sci., 2025)

24.4 THz·V fT×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer. - Chaoqun Zhang; Hong Zhou; Sami Alghamdi; Kun Zhang; Zhihong Liu; Yue Hao 001; Jingcheng Zhang (Sci. China Inf. Sci., 2025)