Improved Row Hammer and Passing Gate Effect Properties With Impurity Reduction of TiN Single Metal Word-Line in Modern DRAM. - Dongkyu Jang; Sangkwan Kim; Taehoon Park; Dae-Kyum Kim; Sang-Bin Ahn; Hyodong Ban; Sung Yun Woo; Yoonki Hong (IEEE Access, 2026)