Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance. - Min Su Cho; Jae Hwa Seo; Sang Ho Lee 003; Hwan Soo Jang; In Man Kang (IEEE Access, 2020)

Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances. - Sang Ho Lee 003; Won Douk Jang; Young Jun Yoon; Jae Hwa Seo; Hye Jin Mun; Min Su Cho; Jaewon Jang; Jin-Hyuk Bae; In Man Kang (IEEE Access, 2021)

Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure. - Jin Park; Min Su Cho; Sang Ho Lee 003; Hee Dae An; So Ra Min; Geon Uk Kim; Young Jun Yoon; Jae Hwa Seo; Sin-Hyung Lee; Jaewon Jang; Jin-Hyuk Bae; In Man Kang (IEEE Access, 2021)