Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO2 and S3N4 as Trapping Layer. - Sang-Youl Lee; Seung-Dong Yang; Jae-Sub Oh; Ho-Jin Yun; Kwang-Seok Jeong; Yu-Mi Kim; Hi-Deok Lee; Ga-Won Lee 001 (IEICE Trans. Electron., 2012)