GAN-Based Framework for Unified Estimation of Process-Induced Random Variation in FinFET. - Taeeon Park; Jihwan Kwak; Hongjoon Ahn; Jinwoong Lee; Jaehyuk Lim; Sangho Yu; Changhwan Shin; Taesup Moon (IEEE Access, 2022)

Quantitative Evaluation of Line-Edge Roughness in Various FinFET Structures: Bayesian Neural Network With Automatic Model Selection. - Sangho Yu; Sang Min Won; Hyoung Won Baac; Donghee Son; Changhwan Shin (IEEE Access, 2022)