Characterization and reliability of III-V gate-all-around MOSFETs. - Mengwei Si; SangHoon Shin; Nathan J. Conrad; Jiangjiang Gu; Jingyun Zhang; Muhammad Ashraful Alam; Peide D. Ye (IRPS, 2015)

High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics. - SangHoon Shin; Yen-Pu Chen; Woojin Ahn; Honglin Guo; Byron Williams; Jeff West; Tom Bonifield; Dhanoop Varghese; Srikanth Krishnan; Muhammad Ashraful Alam (IRPS, 2018)