Oxide electronics for imaging and displays. - Arokia Nathan; Sungsik Lee; Sanghun Jeon (ESSCIRC, 2013)

Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays. - Sungsik Lee; Sanghun Jeon; G. Reza Chaji; Arokia Nathan (Proc. IEEE, 2015)

A flexible microrobots with magnetic actuation for medical tool. - Jeonghun Lee; Eunhee Kim; Sangwon Kim; Sanghun Jeon; Hongsoo Choi (URAI, 2016)

Flexible Multimodal Sensors for Electronic Skin: Principle, Materials, Device, Array Architecture, and Data Acquisition Method. - Sanghun Jeon; Soo-Chul Lim; Tran Quang Trung; Minhyun Jung; Nae-Eung Lee (Proc. IEEE, 2019)

A Highly Integrated Crosspoint Array Using Self-rectifying FTJ for Dual-mode Operations: CAM and PUF. - Sehee Lim; Youngin Goh; Young Kyu Lee; Dong Han Ko; Junghyeon Hwang; Minki Kim; Yeongseok Jeong; Hunbeom Shin; Sanghun Jeon; Seong-Ook Jung (ESSCIRC, 2022)

Lipreading Architecture Based on Multiple Convolutional Neural Networks for Sentence-Level Visual Speech Recognition. - Sanghun Jeon; Ahmed Elsharkawy 001; Mun Sang Kim (Sensors, 2022)

End-to-End Lip-Reading Open Cloud-Based Speech Architecture. - Sanghun Jeon; Mun Sang Kim (Sensors, 2022)

End-to-End Sentence-Level Multi-View Lipreading Architecture with Spatial Attention Module Integrated Multiple CNNs and Cascaded Local Self-Attention-CTC. - Sanghun Jeon; Mun Sang Kim (Sensors, 2022)

Noise-Robust Multimodal Audio-Visual Speech Recognition System for Speech-Based Interaction Applications. - Sanghun Jeon; Mun Sang Kim (Sensors, 2022)

Ultra-high Tunneling Electroresistance Ratio (2 × 104) & Endurance (108) in Oxide Semiconductor-Hafnia Self-rectifying (1.5 × 103) Ferroelectric Tunnel Junction. - Junghyeon Hwang; Chaeheon Kim; Hunbeom Shin; Hwayoung Kim; Sang-Hee Ko Park; Sanghun Jeon (VLSI Technology and Circuits, 2023)

Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices. - Sehee Lim; Youngin Goh; Young Kyu Lee; Dong Han Ko; Junghyeon Hwang; Yeongseok Jeong; Hunbeom Shin; Sanghun Jeon; Seong-Ook Jung (IEEE J. Solid State Circuits, 2023)

Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology. - Venkateswarlu Gaddam; Junghyeon Hwang; Hunbeom Shin; Chaeheon Kim; Giuk Kim; Hyung-Jun Kim; Jooho Lee; Hyun-Cheol Kim; Bumsu Park; Suhwan Lim; Sang Yun Kim; Kwangsoo Kim; et al. (VLSI Technology and Circuits, 2024)

In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling. - Giuk Kim; Hyojun Choi; Hunbeom Shin; Sangho Lee; Sangmok Lee; Yunseok Nam; Minhyun Jung; Ilho Myeong; Kijoon Kim; Jongho Woo; Suhwan Lim; Kwangsoo Kim; et al. (VLSI Technology and Circuits, 2024)

Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security. - Sehee Lim; Junghyeon Hwang; Dong Han Ko; Se Keon Kim; Tae Woo Oh; Sanghun Jeon; Seong-Ook Jung (IEEE Internet Things J., 2024)

The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications. - Hyojun Choi; Giuk Kim; Hunbeom Shin; Yunseok Nam; Sanghun Jeon; Kwangsoo Kim; Suhwan Lim; Jongho Woo; Wanki Kim; Daewon Ha; Jinho Ahn (IRPS, 2025)

Record-Low EOT(3.6Å) & Jleak(7×10-8A/cm2@0.8V) HZO by Dielectric-Selective Microwave Annealing. - Hunbeom Shin; Giuk Kim; Sujeong Lee; Geonhyeong Kang; Hyojun Choi; Taeseung Jung; Sanghun Jeon; Hyung-Jun Kim; Jinho Ahn (IRPS, 2025)