A New Test Generation Methodology Using Selective Clocking for the Clock Line Controlled Circuits. - Sanghyeon Baeg; William A. Rogers (ICCD, 1994)

Hybrid Design for Testability Combining Scan and Clock Line Control and Method for Test Generation. - Sanghyeon Baeg; William A. Rogers (ITC, 1994)

A cost-effective design for testability: clock line control and test generation using selective clocking. - Sanghyeon Baeg; William A. Rogers (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1999)

AC-JTAG: empowering JTAG beyond testing DC nets. - Sung Soo Chung; Sanghyeon Baeg (ITC, 2001)

Analytical test buffer design for differential signaling I/O buffers by error syndrome analysis. - Sanghyeon Baeg; Sung Soo Chung (IEEE Trans. Very Large Scale Integr. Syst., 2005)

Efficient Interconnect Test Patterns for Crosstalk and Static Faults. - Pyoungwoo Min; Hyunbean Yi; Jaehoon Song; Sanghyeon Baeg; Sungju Park (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2006)

Delay Fault Coverage Enhancement by Partial Clocking for Low-Power Designs With Heavily Gated Clocks. - Sanghyeon Baeg (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2007)

Low Power Configuration Strategy of TCAM Lookup Table. - Sanghyeon Baeg (IEICE Trans. Commun., 2008)

Low-Power Ternary Content-Addressable Memory Design Using a Segmented Match Line. - Sanghyeon Baeg (IEEE Trans. Circuits Syst. I Regul. Pap., 2008)

A di/dt Compensation Technique in Delay Testing by Disconnecting Power Pins. - Sanghyeon Baeg (IEEE Trans. Instrum. Meas., 2009)

Null Detector Circuit Design Scheme for Detecting Defective AC-Coupled Capacitors in Differential Signaling. - Sanghyeon Baeg (IEEE Trans. Instrum. Meas., 2009)

Minimizing Soft Errors in TCAM Devices: A Probabilistic Approach to Determining Scrubbing Intervals. - Sanghyeon Baeg; Shi-Jie Wen; Richard Wong (IEEE Trans. Circuits Syst. I Regul. Pap., 2010)

Designing ad-hoc scrubbing sequences to improve memory reliability against soft errors. - Pedro Reviriego; Juan Antonio Maestro; Sanghyeon Baeg (DAC, 2011)

Design method of NOR-type comparison circuit in CAM with ground bounce noise considerations. - Changmin Jung; Sanghyeon Baeg; Shi-Jie Wen; Richard Wong (ISQED, 2011)

Mitigating the effects of large multiple cell upsets (MCUs) in memories. - Juan Antonio Maestro; Pedro Reviriego; Sanghyeon Baeg; Shi-Jie Wen; Richard Wong (ACM Trans. Design Autom. Electr. Syst., 2011)

Soft Error Issues with Scaling Technologies. - Sanghyeon Baeg; Jongsun Bae; Soonyoung Lee; Chul Seung Lim; Sang Hoon Jeon; Hyeonwoo Nam (Asian Test Symposium, 2012)

Hybrid Partitioned SRAM-Based Ternary Content Addressable Memory. - Zahid Ullah; Kim Ilgon; Sanghyeon Baeg (IEEE Trans. Circuits Syst. I Regul. Pap., 2012)

Characterizing the Capacitive Crosstalk in SRAM Cells Using Negative Bit-Line Voltage Stress. - Jongsun Bae; Sanghyeon Baeg; Sungju Park (IEEE Trans. Instrum. Meas., 2012)

Soft error tolerant Content Addressable Memories (CAMs) using error detection codes and duplication. - Juan Antonio Maestro; Pedro Reviriego; Sanghyeon Baeg; Shi-Jie Wen; Richard Wong (Microprocess. Microsystems, 2013)

Single Event Resilient Dynamic Logic Designs. - Haibin Wang; Mulong Li; Li Chen 001; Rui Liu 011; Sanghyeon Baeg; Shi-Jie Wen; Richard Wong; Rita Fung; Jinshun Bi (J. Electron. Test., 2014)

An Efficient Multiple Cell Upsets Tolerant Content-Addressable Memory. - Syed Mohsin Abbas; Soonyoung Lee; Sanghyeon Baeg; Sungju Park (IEEE Trans. Computers, 2014)

Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beams. - GeunYong Bak; Soonyoung Lee; Hosung Lee; Kyungbae Park; Sanghyeon Baeg; Shi-Jie Wen; Richard Wong; Charlie Slayman (IRPS, 2015)

Assessing alpha-particle-induced SEU sensitivity of flip-chip bonded SRAM using high energy irradiation. - Saqib A. Khan; Shi-Jie Wen; Sanghyeon Baeg (IEICE Electron. Express, 2016)

Erratum: Assessing alpha-particle-induced SEU sensitivity of flip-chip bonded SRAM using high energy irradiation [IEICE Electronics Express Vol. 13 (2016) No. 17 pp. 20160627]. - Saqib A. Khan; Shi-Jie Wen; Sanghyeon Baeg (IEICE Electron. Express, 2016)

Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technology. - Kyungbae Park; Chul Seung Lim; Donghyuk Yun; Sanghyeon Baeg (Microelectron. Reliab., 2016)

Statistical distributions of row-hammering induced failures in DDR3 components. - Kyungbae Park; Donghyuk Yun; Sanghyeon Baeg (Microelectron. Reliab., 2016)

An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation. - Saqib A. Khan; Chul Seung Lim; GeunYong Bak; Sanghyeon Baeg; Soonyoung Lee (Microelectron. Reliab., 2017)

Temporal and frequency characteristic analysis of margin-related failures caused by an intermittent nano-scale fracture of the solder ball in a BGA package device. - Hosung Lee; Sanghyeon Baeg; Nelson Hua; Shi-Jie Wen (Microelectron. Reliab., 2017)

Resource-Efficient SRAM-Based Ternary Content Addressable Memory. - Ali Ahmed 005; Kyungbae Park; Sanghyeon Baeg (IEEE Trans. Very Large Scale Integr. Syst., 2017)

Study of TID effects on one row hammering using gamma in DDR4 SDRAMs. - Donghyuk Yun; Myungsang Park; Chul Seung Lim; Sanghyeon Baeg (IRPS, 2018)

Signal characteristic and test exploitation for intermittent nanometer-scale cracks. - Hosung Lee; Sanghyeon Baeg (Microelectron. Reliab., 2018)

Failure signature analysis of power-opens in DDR3 SDRAMs. - Tan Li; Hosung Lee; GeunYong Bak; Sanghyeon Baeg (Microelectron. Reliab., 2018)

Study of proton radiation effect to row hammer fault in DDR4 SDRAMs. - Chul Seung Lim; Kyungbae Park; GeunYong Bak; Donghyuk Yun; Myungsang Park; Sanghyeon Baeg; Shi-Jie Wen; Richard Wong (Microelectron. Reliab., 2018)

Architectural design tradeoffs in SRAM-based TCAMs. - Ali Ahmed 005; Kyungbae Park; Saqib Ali Khan; Naeem Maroof; Sanghyeon Baeg (IEICE Electron. Express, 2019)

Fault Coverage Re-Evaluation of Memory Test Algorithms With Physical Memory Characteristics. - Kiseok Lee; Jeonghwan Kim; Sanghyeon Baeg (IEEE Access, 2021)

DDR4 Data Channel Failure Due to DC Offset Caused by Intermittent Solder Ball Fracture in FBGA Package. - Muhammad Waqar; GeunYong Bak; Junhyeong Kwon; Sanghyeon Baeg (IEEE Access, 2021)

Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray Radiation. - Donghyuk Yun; Myungsang Park; GeunYong Bak; Sanghyeon Baeg; Shi-Jie Wen (IEEE Access, 2021)

Write Recovery Time Degradation by Thermal Neutrons in DDR4 DRAM Components. - Hyeongseok Oh; Myungsun Chun; Jiwon Lee; Shi-Jie Wen; Nick Yu; Byung-Gun Park; Sanghyeon Baeg (IRPS, 2023)

Total-Ionizing Dose Damage from X-Ray PCB Inspection Systems. - Nicholas J. Pieper; M. Chun; Yoni Xiong; H. M. Dattilo; Jenna B. Kronenberg; Sanghyeon Baeg; Shi-Jie Wen; Rita Fung; D. Chan; C. Escobar; Bharat L. Bhuva (IRPS, 2024)