A 0.64μm 4-Photodiode 1.28μm 50Mpixel CMOS Image Sensor with 0.98e- Temporal Noise and 20Ke- Full-Well Capacity Employing Quarter-Ring Source-Follower. - Hyuncheol Kim; Yun Hyeok Kim; Sanghyuck Moon; Hwanwoong Kim; Byeongjun Yoo; Jueun Park; Seyoung Kim; June-Mo Koo; Sewon Seo; Hye Ji Shin; Younghwan Choi; Jinwoo Kim; et al. (ISSCC, 2023)

A Temporal Noise Reduction via 40% Enhanced Conversion Gain in Dual-Pixel CMOS Image Sensor with Full-Depth Deep-Trench Isolation and Locally Lowered-Stack Technology. - Seunghwan Lee; Jeongjin Cho; Shinyoung Choi; Sung Yoon Min; Eunjung Lee; Minji Jung; Kyoungmok Son; Hyunchaul Jeong; Heetak Han; Sachoun Park; Sanghyuck Moon; Seungki Jung; et al. (VLSI Technology and Circuits, 2024)