Highly manufacturable Self-Aigned Direct Backside Contact (SA-DBC) and Backside Gate Contact (BGC) for 3-dimensional Stacked FET at 48nm gate pitch. - Jaehyun Park; Juhun Park; Kyuman Hwang; Jinchan Yun; Dahye Kim; Sungil Park; Jejune Park; Jinwook Yang; Jae Won Jeong; Chuljin Yun; Jinho Bae; Sam Park; et al. (VLSI Technology and Circuits, 2024)

Future Technology Outlook on DRAM/Flash Memories for More Moore and More Than Moore. - Su-Jin Ahn; Young Guen Song; Dongguk Cho; Daewon Ha; Wanki Kim; Kwangmin Park; Kwangjin Moon; Jin-Woo Han; Seon Il Shim; Sangjin Hyun; Jaihyuk Song (IMW, 2025)