A universal MOSFET mobility degradation model for circuit simulation. - Gregory Munson Yeric; A. F. Tasch Jr.; Sanjay K. Banerjee (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1990)

Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs. - David Q. Kelly; Sagnik Dey; David Onsongo; Sanjay K. Banerjee (Microelectron. Reliab., 2005)

Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering. - Amritesh Rai; Jun Hong Park; Chenxi Zhang; Iljo Kwak; Steven Wolf; Suresh Vishwanath; Xinyu Lin; Jacek Furdyna; Huili Grace Xing; Kyeongjae Cho; Andrew C. Kummel; Sanjay K. Banerjee (DRC, 2018)