Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor. - Hubert Enichlmair; Sara Carniello; Jong Mun Park; Rainer Minixhofer (Microelectron. Reliab., 2007)

Interface traps density-of-states as a vital component for hot-carrier degradation modeling. - Stanislav Tyaginov; Ivan A. Starkov; Oliver Triebl; Johann Cervenka; C. Jungemann; Sara Carniello; Jong Mun Park; Hubert Enichlmair; Markus Karner; Ch. Kernstock; Ehrenfried Seebacher; Rainer Minixhofer; et al. (Microelectron. Reliab., 2010)

Intrinsic stress analysis of tungsten-lined open TSVs. - Lado Filipovic; Anderson Pires Singulani; Frederic Roger; Sara Carniello; Siegfried Selberherr (Microelectron. Reliab., 2015)

Modelling and measurements of thermomechanical stress induced drift on polysilicon resistors with different layout. - Lorenzo Benvenuti; Paolo Bruschi; Luca Fanucci; Raffaele Coppeta; Sara Carniello; Luigi Di Piro; Francesco Tinfena (DTIS, 2019)

Defining and Achieving Next-Generation Green Electronics: A Perspective on Best Practices Through the Lens of Hybrid Printed Electronics. - Kealie Vogel; Sara Carniello; Valerio Beni; Akshat Sudheshwar; Nadia Malinverno; Yolanda Alesanco; Max Torrellas; Stephan Harkema; Margreet De Kok; Corné Rentrop; Ignacio Zurano Villasuso; Lou Bernard; et al. (IEEE Access, 2025)