A 20ns-write 45ns-read and 1014-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors. - Shuhei Maeda; Satoru Ohshita; Kazuma Furutani; Yuto Yakubo; Takahiko Ishizu; Tomoaki Atsumi; Yoshinori Ando; Daisuke Matsubayashi; Kiyoshi Kato; Takashi Okuda; Masahiro Fujita; Shunpei Yamazaki (ISSCC, 2018)