1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation. - Shizunori Matsumoto; Hiroaki Ueno; Satoshi Hosokawa; Toshihiko Kitamura; Mitiko Miura-Mattausch; Hans Jürgen Mattausch; Tatsuya Ohguro; Shigetaka Kumashiro; Tetsuya Yamaguchi; Kyoji Yamashita; Noriaki Nakayama (IEICE Trans. Electron., 2005)