Reliability comparison of 28V-50V GaN-on-SiC S-band and X-band technologies. - Donald A. Gajewski; Satyaki Ganguly; Scott T. Sheppard; Simon Wood; Jeff B. Barner; Jim W. Milligan; John Palmour (Microelectron. Reliab., 2018)

A High Efficiency, Ka-Band, GaN-on-SiC MMIC with Low Compression. - Bruce Schmukler; Jeffrey Barner; Jeremy Fisher; Donald A. Gajewski; Scott T. Sheppard; Jim W. Milligan; Kyle M. Bothe; Satyaki Ganguly; Terry Alcorn; Jennifer Gao; Chris Hardiman; Evan Jones; et al. (BCICTS, 2019)

DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited). - Satyaki Ganguly; Kyle M. Bothe; Alexandre Niyonzima; Thomas Smith; Yueying Liu; Jeremy Fisher; Fabian Radulescu; Donald A. Gajewski; Scott T. Sheppard; Jim W. Milligan; Basim Noori; John W. Palmour (IRPS, 2022)

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs. - Satyaki Ganguly; Daniel J. Lichtenwalner; Caleb Isaacson; Donald A. Gajewski; Philipp Steinmann; Ryan Foarde; Brett Hull; Sei-Hyung Ryu; Scott Allen; John W. Palmour (IRPS, 2022)

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations. - Edward Van Brunt; Daniel J. Lichtenwalner; J. H. Park; Satyaki Ganguly; J. W. McPherson (IRPS, 2023)

GaN HEMTs Design and Modeling for 5G. - Yueying Liu; John Wood; Zongyang Hu; Satyaki Ganguly; Jeremy Fisher; Mike Watts; Scott T. Sheppard; Donald A. Gajewski; Basim Noori (IRPS, 2023)

Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs. - Ayan K. Biswas; Daniel J. Lichtenwalner; Jae-Hyung Park; Brett Hull; Satyaki Ganguly; Donald A. Gajewski; Elif Balkas (IRPS, 2024)