Non-Linear RF Modeling of GaN HEMTs with Industry Standard ASM GaN Model (Invited). - Sourabh Khandelwal; Yogesh Singh Chauhan; Jason Hodges; Sayed Ali Albahrani (BCICTS, 2018)

A Computationally Efficient Modelling Methodology for Field-Plates in GaN HEMTs. - Jason Hodges; Sayed Ali Albahrani; Sourabh Khandelwal (BCICTS, 2019)

Design methodology considering evolution of statistical corners under long term degradation. - Hossein Eslahi; Dhawal Mahajan; Sayed Ali Albahrani; Sourabh Khandelwal (Microelectron. J., 2019)

An Analytical Model for Hot Carrier Induced Long-Term Degradation in Power Amplifiers. - Hossein Eslahi; Sayed Ali Albahrani; Dhawal Mahajan; Sourabh Khandelwal (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2020)

Characterization and Large-Signal Modeling of 4-Pole Backgated InGaAs HEMT. - Antony Abel Kunnath; Sayed Ali Albahrani; Dirk Schwantuschke; Arnulf Leuther (BCICTS, 2024)

Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-Gate. - Antony Abel Kunnath; Maxime Moulin; Sayed Ali Albahrani; Dirk Schwantuschke; Arnulf Leuther (BCICTS, 2024)

ASM-GaN Model for Resistive Mixer Applications at D-Band Frequencies. - Cristina Maurette-Blasini; Dirk Schwantuschke; Sayed Ali Albahrani; Peter Brückner; Konstantin Kuliabin; Sébastien Chartier; Rüdiger Quay (BCICTS, 2024)

Large-Signal Modeling of a 50 nm mHEMT Incorporating a Physical Impact-Ionization Model. - Yasin Yüce; Sayed Ali Albahrani; Dirk Schwantuschke; Maxime Moulin; Arnulf Leuther (BCICTS, 2024)