Sayeef S. Salahuddin

Orcid: 0000-0002-0315-2208

According to our database1, Sayeef S. Salahuddin authored at least 26 papers between 2004 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
FerroX: A GPU-accelerated, 3D phase-field simulation framework for modeling ferroelectric devices.
Comput. Phys. Commun., September, 2023

Record Transconductance in Leff~30 nm Self-Aligned Replacement Gate ETSOI nFETs Using Low EOT Negative Capacitance HfO2-ZrO2 Superlattice Gate Stack.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022
Innovating at Speed and at Scale: A Next Generation Infrastructure for Accelerating Semiconductor Technologies.
CoRR, 2022

On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Compact Model for Trap Assisted Tunneling based GIDL.
Proceedings of the Device Research Conference, 2022

2021
Ultrathin Ferroelectricity and Its Application in Advanced Logic and Memory Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
Scanning the Issue.
Proc. IEEE, 2020

A Density Metric for Semiconductor Technology [Point of View].
Proc. IEEE, 2020

Ising Model Optimization Problems on a FPGA Accelerated Restricted Boltzmann Machine.
CoRR, 2020

Logically Synthesized, Hardware-Accelerated, Restricted Boltzmann Machines for Combinatorial Optimization and Integer Factorization.
CoRR, 2020

GC-eDRAM design using hybrid FinFET/NC-FinFET.
Proceedings of the ISLPED '20: ACM/IEEE International Symposium on Low Power Electronics and Design, 2020

Dynamic Memory and Sequential Logic Design using Negative Capacitance FinFETs.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2020

Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET.
Proceedings of the 2020 Device Research Conference, 2020

2019
Negative Capacitance Transistors.
Proc. IEEE, 2019

Combining Learned Representations for Combinatorial Optimization.
CoRR, 2019

2017
Full chip power benefits with negative capacitance FETs.
Proceedings of the 2017 IEEE/ACM International Symposium on Low Power Electronics and Design, 2017

In Quest of the Next Information Processing Substrate: Extended Abstract: Invited.
Proceedings of the 54th Annual Design Automation Conference, 2017

2016
Nonvolatile memory design based on ferroelectric FETs.
Proceedings of the 53rd Annual Design Automation Conference, 2016

2013
Electrothermal analysis of spin-transfer-torque random access memory arrays.
ACM J. Emerg. Technol. Comput. Syst., 2013

2011
Performance assessment of partially unzipped carbon nanotube field-effect transistors.
Proceedings of the 2011 IEEE/ACM International Symposium on Nanoscale Architectures, 2011

2010
Design Paradigm for Robust Spin-Torque Transfer Magnetic RAM (STT MRAM) From Circuit/Architecture Perspective.
IEEE Trans. Very Large Scale Integr. Syst., 2010

Dual-Source-Line-Bias Scheme to Improve the Read Margin and Sensing Accuracy of STTRAM in Sub-90-nm Nodes.
IEEE Trans. Circuits Syst. II Express Briefs, 2010

Analysis of thermal behaviors of spin-torque-transfer RAM: a simulation study.
Proceedings of the 2010 International Symposium on Low Power Electronics and Design, 2010

2008
Modeling of failure probability and statistical design of spin-torque transfer magnetic random access memory (STT MRAM) array for yield enhancement.
Proceedings of the 45th Design Automation Conference, 2008

Variation-tolerant Spin-Torque Transfer (STT) MRAM array for yield enhancement.
Proceedings of the IEEE 2008 Custom Integrated Circuits Conference, 2008

2004
Reducing signal-bias from MAD estimated noise level for DCT speech enhancement.
Signal Process., 2004


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