Reliability studies of SiC vertical power MOSFETs. - Daniel J. Lichtenwalner; Brett Hull; Edward Van Brunt; Shadi Sabri; Donald A. Gajewski; Dave Grider; Scott Allen; John W. Palmour; Akin Akturk; James McGarrity (IRPS, 2018)

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs. - Satyaki Ganguly; Daniel J. Lichtenwalner; Caleb Isaacson; Donald A. Gajewski; Philipp Steinmann; Ryan Foarde; Brett Hull; Sei-Hyung Ryu; Scott Allen; John W. Palmour (IRPS, 2022)

Recognition: capture(scene). - Rintaro Fujita; Scott Allen (SIGGRAPH Asia Art Gallery, 2024)