Stress-induced dislocations in silicon integrated circuits. - Paul M. Fahey; Siegfried R. Mader; Scott R. Stiffler; Rick L. Mohler; J. Daniel Mis; James A. Slinkman (IBM J. Res. Dev., 1992)

Optimization of silicon technology for the IBM System z9. - Daniel J. Poindexter; Scott R. Stiffler; Philip T. Wu; Paul D. Agnello; Thomas Ivers; Shreesh Narasimha; Thomas B. Faure; Jed H. Rankin; David A. Grosch; Marc D. Knox; Daniel C. Edelstein; Mukesh Khare; et al. (IBM J. Res. Dev., 2007)

Performance analysis and modeling of deep trench decoupling capacitor for 32 nm high-performance SOI processors and beyond. - Balaji Jayaraman; Sneha Gupta; Yanli Zhang; Puneet Goyal; Herbert Ho; Rishikesh Krishnan; Sunfei Fang; Sungjae Lee; Douglas Daley; Kevin McStay; Bernhard Wunder; John Barth 001; et al. (ICICDT, 2012)

Process technology for IBM 14-nm processor designs featuring silicon-on-insulator FinFETs. - Scott R. Stiffler; Ravikumar Ramachandran; W. Kirklen Henson; Noah Zamdmer; Kevin McStay; Giuseppe La Rosa; Kevin M. Boyd; Sungjae Lee; Claude Ortolland; Paul C. Parries (IBM J. Res. Dev., 2018)