New Insights into the Imprint Effect in FE-HfO2 and its Recovery. - Yusuke Higashi; Karine Florent; A. Subirats; Ben Kaczer; Luca Di Piazza; Sergiu Clima; Nicolo Ronchi; Sean R. C. McMitchell; Kaustuv Banerjee; Umberto Celano; Masamichi Suzuki; Dimitri Linten; et al. (IRPS, 2019)

First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application. - K. Banerjee; Laurent Breuil; A. P. Milenin; M. Pak; J. Stiers; Sean R. C. McMitchell; L. Di Piazza; Geert Van den Bosch; Jan Van Houdt (IMW, 2021)

Impact of mechanical strain on wakeup of HfO2 ferroelectric memory. - Anastasiia Kruv; Sean R. C. McMitchell; Sergiu Clima; Oguzhan O. Okudur; Nicolo Ronchi; Geert Van den Bosch; Mario Gonzalez; Ingrid De Wolf; Jan Van Houdt (IRPS, 2021)

A comprehensive variability study of doped HfO2 FeFET for memory applications. - Nicolo Ronchi; Lars-Åke Ragnarsson; Umberto Celano; Ben Kaczer; K. Kaczmarek; K. Banerjee; Sean R. C. McMitchell; Geert Van den Bosch; Jan Van Houdt (IMW, 2022)