High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width. - Pouya Hashemi; Takashi Ando; Karthik Balakrishnan; John Bruley; Sebastian U. Engelmann; John A. Ott; Vijay Narayanan; D.-G. Park; Renee T. Mo; Effendi Leobandung (VLSIC, 2015)