Representation of the SiGe HBT's thermal impedance by linear and recursive networks. - Hassène Mnif; Thomas Zimmer; Jean Luc Battaglia; Sébastien Fregonese (Microelectron. Reliab., 2004)

CNTFET Modeling and Reconfigurable Logic-Circuit Design. - Ian O'Connor; Junchen Liu; Frédéric Gaffiot; Fabien Prégaldiny; Christophe Lallement; Cristell Maneux; Johnny Goguet; Sébastien Fregonese; Thomas Zimmer; Lorena Anghel; Trong-Trinh Dang; Régis Leveugle (IEEE Trans. Circuits Syst. I Regul. Pap., 2007)

From nanoscale technology scenarios to compact device models for ambipolar devices. - Sébastien Fregonese; Cristell Maneux; Thomas Zimmer (ICECS, 2010)

Design and Modeling of a Neuro-Inspired Learning Circuit Using Nanotube-Based Memory Devices. - Si-Yu Liao; Jean-Marie Retrouvey; Guillaume Agnus; Weisheng Zhao; Cristell Maneux; Sébastien Fregonese; Thomas Zimmer; Djaafar Chabi; Arianna Filoramo; Vincent Derycke; Christian Gamrat; Jacques-Olivier Klein (IEEE Trans. Circuits Syst. I Regul. Pap., 2011)

Pulsed I(V) - pulsed RF measurement system for microwave device characterization with 80ns/45GHz. - Mario Weis; Sébastien Fregonese; Marco Santorelli; Amit Kumar Sahoo; Cristell Maneux; Thomas Zimmer (ESSDERC, 2012)

Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation. - C. Mukherjee 001; Sébastien Fregonese; Thomas Zimmer; Cristell Maneux; Henri Happy; David Mele (ESSDERC, 2014)

A new physics-based compact model for Bilayer Graphene Field-Effect Transistors. - Jorgue Daniel Aguirre Morales; Sébastien Fregonese; C. Mukherjee 001; Cristell Maneux; Thomas Zimmer (ESSDERC, 2015)

Characterization and modeling of low-frequency noise in CVD-grown graphene FETs. - C. Mukherjee 001; Jorgue Daniel Aguirre Morales; Sébastien Fregonese; Thomas Zimmer; Cristell Maneux; Henri Happy; Wei Wei (ESSDERC, 2015)

Graphene FET evaluation for RF and mmWave circuit applications. - Sébastien Fregonese; Jorgue Daniel Aguirre Morales; Magali De Matos; Cristell Maneux; Thomas Zimmer (ISCAS, 2015)

Substrate-coupling effect in BiCMOS technology for millimeter wave applications. - Sébastien Fregonese; Rosario D'Esposito; Magali De Matos; Andreas Kohler; Cristell Maneux; Thomas Zimmer (NEWCAS, 2015)

Physics-based electrical compact model for monolayer Graphene FETs. - Jorgue Daniel Aguirre Morales; Sébastien Fregonese; C. Mukherjee 001; Cristell Maneux; Thomas Zimmer; Wei Wei; Henri Happy (ESSDERC, 2016)

A wideband highly efficient class-J integrated power amplifier for 5G applications. - Tony Hanna; Nathalie Deltimple; Sébastien Fregonese (NEWCAS, 2017)

A class-J power amplifier for 5G applications in 28nm CMOS FD-SOI technology. - Tony Hanna; Nathalie Deltimple; Sébastien Fregonese (SBCCI, 2017)

Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. - Pascal Chevalier 002; Michael Schröter; Colombo R. Bolognesi; Vincenzo d'Alessandro; Maria Alexandrova; Josef Böck; Ralf Flickiger; Sébastien Fregonese; Bernd Heinemann; Christoph Jungemann; Rickard Lovblom; Cristell Maneux; et al. (Proc. IEEE, 2017)

2D RF Electronics: from devices to circuits - challenges and applications. - D. Fadi; Wei Wei; Emiliano Pallecchi; M. Anderson; J. Stake; Marina Deng; Sébastien Fregonese; Thomas Zimmer; Henri Happy (DRC, 2018)

TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range. - Soumya Ranjan Panda; Sébastien Fregonese; Anjan Chakravorty; Thomas Zimmer (BCICTS, 2019)

Collector-substrate modeling of SiGe HBTs up to THz range. - Bishwadeep Saha; Sébastien Frégonese; Soumya Ranjan Panda; Anjan Chakravorty; Didier Céli; Thomas Zimmer (BCICTS, 2019)

Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance. - Sébastien Fregonese; Chhandak Mukherjee; Holger Rücker; Pascal Chevalier 002; Gerhard Fischer; Didier Céli; Marina Deng; Marine Couret; François Marc; Cristell Maneux; Thomas Zimmer (BCICTS, 2021)

Electro-Thermal Investigation of SiGe HBTs: A Review. - Thomas Zimmer; Sébastien Fregonese; Anjan Chakravorty (BCICTS, 2023)

A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications. - Pascal Chevalier 002; Florian Cacho; C. Durand; N. Derrier; V. Millon; Frederic Monsieur; A. Gauthier; P. Billy; Sébastien Fregonese; Thomas Zimmer; H. Audouin; Michel Buczko; et al. (BCICTS, 2024)

On the Safe Operating Area of InP HBTs. - Markus Müller; Sébastien Fregonese; Christoph Weimer; Guangsheng Liang; Xiaodi Jin; Maximilian Froitzheim; Thomas Zimmer; Michael Schröter (BCICTS, 2024)