A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $ mathsf{i}$. - Bvunarvul Kim; Seungpil Lee; Beomseok Hah; Kanawoo Park; Yongsoon Park; Kangwook Jo; Yujong Noh; Hyeon-Cheon Seol; Hyunsoo Lee; Jae-Hyeon Shin; Seongjin Choi; Youngdon Jung; et al. (ISSCC, 2023)

A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput. - Wanik Cho; Chanhui Jeong; Jongwoo Kim; Jongseok Jung; Keunseon Ahn; Jayoon Goo; Sangkyu Lee; Kayoung Cho; Tei Cho; Dauni Kim; Gwan Park; Yushin Ahn; et al. (ISSCC, 2025)