Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique. - Katsunori Makihara; Yoshihiro Okamoto; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki (IEICE Trans. Electron., 2005)

Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate. - Hideki Murakami; Yoshikazu Moriwaki; Masafumi Fujitake; Daisuke Azuma; Seiichiro Higashi; Seiichi Miyazaki (IEICE Trans. Electron., 2005)

Evaluation of Dielectric Reliability of Ultrathin HfSiOxNy in Metal-Gate Capacitors. - Yanli Pei; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki; Seiji Inumiya; Yasuo Nara (IEICE Trans. Electron., 2007)

Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM. - Katsunori Makihara; Mitsuhisa Ikeda; Seiichiro Higashi; Seiichi Miyazaki (IEICE Trans. Electron., 2008)

Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities. - Akio Ohta; Daisuke Kanme; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki (IEICE Trans. Electron., 2011)

Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure. - Guobin Wei; Yuta Goto; Akio Ohta; Katsunori Makihara; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki (IEICE Trans. Electron., 2011)

Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering. - Akio Ohta; Yuta Goto; Shingo Nishigaki; Guobin Wei; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki (IEICE Trans. Electron., 2012)

Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer. - Kuniaki Hashimoto; Akio Ohta; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki (IEICE Trans. Electron., 2013)

Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior. - Akio Ohta; Katsunori Makihara; Mitsuhisa Ikeda; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki (IEICE Trans. Electron., 2013)