Evaluation of Dielectric Reliability of Ultrathin HfSiOxNy in Metal-Gate Capacitors. - Yanli Pei; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki; Seiji Inumiya; Yasuo Nara (IEICE Trans. Electron., 2007)

Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing. - Izumi Hirano; Yasushi Nakasaki; Shigeto Fukatsu; Masakazu Goto; Koji Nagatomo; Seiji Inumiya; Katsuyuki Sekine; Yuichiro Mitani; Kikuo Yamabe (Microelectron. Reliab., 2013)