Development of Iridium-Based Gate Structure for Indium Aluminum Arsenide/indium Gallium Arsenide/indium Phosphide Enhancement-Mode and Depletion-Mode High Electron Mobility Transistors - Seiyon Kim (2005)

Demonstration of crystalline IGZO transistor with high thermal stability for memory applications. - Whayoung Kim; Jaehyeon Kim; Dongjin Ko; Jun-Hwe Cha; Gyeongcheol Park; Youngbae Ahn; Jong-Young Lee; Minchul Sung; Hyejung Choi; Seung Wook Ryu; Seiyon Kim; Myung-Hee Na; et al. (VLSI Technology and Circuits, 2023)

QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering. - Sunghyun Yoon; Sung-In Hong; Daehyun Kim; Garam Choi; Young Mo Kim; Kyunghoon Min; Seiyon Kim; Myung-Hee Na; Seonyong Cha (VLSI Technology and Circuits, 2023)