1.2V 1.6Gb/s 56nm 6F2 4Gb DDR3 SDRAM with hybrid-I/O sense amplifier and segmented sub-array architecture. - Yongsam Moon; Yong-Ho Cho; Hyun-Bae Lee; Byung-Hoon Jeong; Seok-Hun Hyun; Byungchul Kim; In-Chul Jeong; Seong-Young Seo; Junho Shin; Seok-Woo Choi; Ho-Sung Song; Jung-Hwan Choi; et al. (ISSCC, 2009)

A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme. - Kyomin Sohn; Taesik Na; Indal Song; Yong Shim; Wonil Bae; Sanghee Kang; Dongsu Lee; Hangyun Jung; Seok-Hun Hyun; Hanki Jeoung; Ki Won Lee; Jun-Seok Park; et al. (IEEE J. Solid State Circuits, 2013)

Dual-loop 2-step ZQ calibration for dedicated power supply voltage in LPDDR4 SDRAM. - Chang-Kyo Lee; Junha Lee; Kiho Kim; Jin-Seok Heo; Gil-Hoon Cha; Jin-Hyeok Baek; Daesik Moon; Yoon-Joo Eom; Tae-Sung Kim; Hyunyoon Cho; Young Hoon Son; Seonghwan Kim 002; et al. (A-SSCC, 2017)

23.2 A 5Gb/s/pin 8Gb LPDDR4X SDRAM with power-isolated LVSTL and split-die architecture with 2-die ZQ calibration scheme. - Chang-Kyo Lee; Yoon-Joo Eom; Jin-Hee Park; Junha Lee; Hye-Ran Kim; Kihan Kim; Young Choi; Ho-Jun Chang; Jonghyuk Kim; Jong-Min Bang; Seungjun Shin; Hanna Park; et al. (ISSCC, 2017)

23.7 A time-based receiver with 2-tap DFE for a 12Gb/s/pin single-ended transceiver of mobile DRAM interface in 0.8V 65nm CMOS. - Il-Min Yi; Min-Kyun Chae; Seok-Hun Hyun; Seung-Jun Bae; Jung-Hwan Choi; Seong-Jin Jang; Byungsub Kim; Jae-Yoon Sim; Hong-June Park (ISSCC, 2017)

An Enhanced Built-off-Test Transceiver with Wide-range, Self-calibration Engine for 3.2 Gb/s/pin DDR4 SDRAM. - Joung-Wook Moon; Hye-Sung Yoo; Hundai Choi; Il-Won Park; Seok-Yong Kang; Jun-Bae Kim; Haeyoung Chung; Kiho Kim; Dong-Hun Lee; Ki-Jae Song; Seok-Hun Hyun; Indal Song; et al. (A-SSCC, 2018)

A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process. - Ki Chul Chun; Yonggyu Chu; Jin-Seok Heo; Tae-Sung Kim; Soohwan Kim; Hui-Kap Yang; Mi-Jo Kim; Chang-Kyo Lee; Ju-Hwan Kim; Hyunchul Yoon; Chang-Ho Shin; Sang-uhn Cha; et al. (ISSCC, 2018)

A sub-0.85V, 6.4GBP/S/Pin TX-Interleaved Transceiver with Fast Wake-Up Time Using 2-Step Charging Control and VOHCalibration in 20NM DRAM Process. - Jin-Hyeok Baek; Chang-Kyo Lee; Kiho Kim; Daesik Moon; Gil-Hoon Cha; Jin-Seok Heo; Min-Su Ahn; Dong-Ju Kim; Jae-Joon Song; Seokhong Kwon; Jongmin Kim; Kyung-Soo Kim; et al. (VLSI Circuits, 2018)

Dual-Loop Two-Step ZQ Calibration for Dynamic Voltage-Frequency Scaling in LPDDR4 SDRAM. - Chang-Kyo Lee; Junha Lee; Kiho Kim; Jin-Seok Heo; Jin-Hyeok Baek; Gil-Hoon Cha; Daesik Moon; Dong-Hun Lee; Jong-Wook Park; Seunseob Lee; Si-Hyeong Cho; Young-Ryeol Choi; et al. (IEEE J. Solid State Circuits, 2018)

A Time-Based Receiver With 2-Tap Decision Feedback Equalizer for Single-Ended Mobile DRAM Interface. - Il-Min Yi; Min-Kyun Chae; Seok-Hun Hyun; Seung-Jun Bae; Jung-Hwan Choi; Seong-Jin Jang; Byungsub Kim; Jae-Yoon Sim; Hong-June Park (IEEE J. Solid State Circuits, 2018)

A 7.5Gb/s/pin LPDDR5 SDRAM With WCK Clocking and Non-Target ODT for High Speed and With DVFS, Internal Data Copy, and Deep-Sleep Mode for Low Power. - Kyung-Soo Ha; Chang-Kyo Lee; Dongkeon Lee; Daesik Moon; Jin-Hun Jang; Hyong-Ryol Hwang; Hyung-Joon Chi; Junghwan Park; Seungjun Shin; Dukha Park; Sang-Yun Kim 001; Sukhyun Lim; et al. (ISSCC, 2019)

A 5Gb/s/pin 16Gb LPDDR4/4X Reconfigurable SDRAM with Voltage-High Keeper and a Prediction-based Fast-tracking ZQ Calibration. - Jin-Seok Heo; Kihan Kim; Dong-Hoon Lee; Chang-Kyo Lee; Daesik Moon; Kiho Kim; Jin-Hyeok Baek; Sung-Woo Yoon; Hui-Kap Yang; Kyungryun Kim; Youngjae Kim; Bokgue Park; et al. (VLSI Circuits, 2019)

Adapting Internet of Things to Arduino-based Devices for Low-Cost Remote Sensing in School Science Learning Environments. - Seok-Hun Hyun; Hyun-Jung Cha; Jong-Chan Kim (Int. J. Online Biomed. Eng., 2021)