Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length. - Junyeap Kim; Hanbin Yoo; Heesung Lee; Seong Kwang Kim; Sungju Choi; Sung-Jin Choi; Dae Hwan Kim; Dong Myong Kim (Microelectron. Reliab., 2018)

3D stackable cryogenic InGaAs HEMTs for heterogeneous and monolithic 3D integrated highly scalable quantum computing systems. - Jaeyong Jeong; Seong Kwang Kim; Jongmin Kim; Dae-Myeong Geum; Jisung Lee; Seung-Young Park; Sanghyeon Kim (VLSI Technology and Circuits, 2022)

Cryogenic RF Transistors and Routing Circuits Based on 3D Stackable InGaAs HEMTs with Nb Superconductors for Large-Scale Quantum Signal Processing. - Jaeyong Jeong; Seong Kwang Kim; Yoon-Je Suh; Jisung Lee; Joonyoung Choi; Juhyuk Park; Joon Pyo Kim; Bong Ho Kim; Younjung Jo; Seung-Young Park; Jongmin Kim; Sanghyeon Kim (VLSI Technology and Circuits, 2023)

Ge(110) GAA Nanosheet / Si(100) Tri-gate Nanosheet Monolithic CFETs Featuring Record-High Hole Mobility. - Seong Kwang Kim; Hyeongrak Lim; Jaeyong Jeong; Young-Keun Park; Jejune Park; Sungil Park; Jaehyun Park; Daewon Ha; Byung Jin Cho; Sanghyeon Kim (VLSI Technology and Circuits, 2024)

First Heterogeneous and Monolithic 3D (HM3D) Integration of InGaAs HEMTs and InP/InGaAs DHBTs on Si CMOS for Next-Generation Wireless Communication. - Nahyun Rheem; Jaeyong Jeong; Yoon-Je Suh; Chan Jik Lee; Bong Ho Kim; Joon Pyo Kim; Seong Kwang Kim; Hyeongrak Lim; Jongmin Kim; Dae-Hwan Ahn; Jae-Hoon Han; Jongwon Lee; et al. (VLSI Technology and Circuits, 2024)