A 192-Gb 12-High 896-GB/s HBM3 DRAM With a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization. - Myeong-Jae Park; Jinhyung Lee; Kyungjun Cho; Ji Hwan Park; Junil Moon; Sung-Hak Lee; Tae-Kyun Kim 001; Sanghoon Oh; Seokwoo Choi; Yongsuk Choi; Ho Sung Cho; Tae-Sik Yun; et al. (IEEE J. Solid State Circuits, 2023)