Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfets. - Sergej Makovejev; Babak Kazemi Esfeh; Jean-Pierre Raskin; Denis Flandre; Valeria Kilchytska; François Andrieu (ESSDERC, 2013)

Variability of UTBB MOSFET analog figures of merit in wide frequency range. - Sergej Makovejev; Babak Kazemi Esfeh; Jean-Pierre Raskin; Valeria Kilchytska; Denis Flandre; Vincent Barral; Nicolas Planes; Michel Haond (ESSDERC, 2014)

CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. - Sachin Yadav 001; Pieter Cardinael; Ming Zhao; Komal Vondkar; Uthayasankaran Peralagu; AliReza Alian; Ahmad Khaled; Sergej Makovejev; Enrique Ekoga; Dimitri Lederer; Jean-Pierre Raskin; Bertrand Parvais; et al. (ICICDT, 2021)