n-Al0.15Ga0.85 N/p-6H-SiC heterostructure and based bipolar transistor. - Ya. I. Alivov; Qian Fan; Xianfeng Ni; Sergey A. Chevtchenko; I. B. Bhat; Hadis Morkoç (Microelectron. Reliab., 2010)

Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors. - Sergey A. Chevtchenko; Matthias Schulz; Eldad Bahat-Treidel; Wilfred John; Stephan Freyer; Paul Kurpas; Joachim Würfl (Microelectron. Reliab., 2014)