A 1.2V 30nm 1.6Gb/s/pin 4Gb LPDDR3 SDRAM with input skew calibration and enhanced control scheme. - Yong-Cheol Bae; Joon-Young Park; Sang Jae Rhee; Seung-Bum Ko; Yonggwon Jeong; Kwang-Sook Noh; Young Hoon Son; Jaeyoun Youn; Yonggyu Chu; Hyunyoon Cho; Mijo Kim; Daesik Yim; et al. (ISSCC, 2012)

18.1 A 20nm 9Gb/s/pin 8Gb GDDR5 DRAM with an NBTI monitor, jitter reduction techniques and improved power distribution. - Hye-Yoon Joo; Seung-Jun Bae; Young-Soo Sohn; Young-Sik Kim; Kyung-Soo Ha; Min-Su Ahn; Young-Ju Kim 001; Yong-Jun Kim; Ju-Hwan Kim; Won-Jun Choi; Chang-Ho Shin; Soo Hwan Kim; et al. (ISSCC, 2016)

A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process. - Ki Chul Chun; Yonggyu Chu; Jin-Seok Heo; Tae-Sung Kim; Soohwan Kim; Hui-Kap Yang; Mi-Jo Kim; Chang-Kyo Lee; Ju-Hwan Kim; Hyunchul Yoon; Chang-Ho Shin; Sang-uhn Cha; et al. (ISSCC, 2018)