Pathfinding for 22nm CMOS designs using Predictive Technology Models. - Xia Li; Wei Zhao; Yu Cao 001; Zhi Zhu; Jooyoung Song; David Bang; Chi-Chao Wang; Seung-Hyuk Kang; Joseph Wang; Matt Nowak; Nick Yu (CICC, 2009)

Design Methodologies for STT-MRAM (Spin-Torque Transfer Magnetic Random Access Memory) Sensing Circuits. - Jisu Kim; Jee-Hwan Song; Seung-Hyuk Kang; Sei-Seung Yoon; Seong-Ook Jung (IEICE Trans. Electron., 2010)

A 1.0V 45nm nonvolatile magnetic latch design and its robustness analysis. - Peiyuan Wang; Xiang Chen 010; Yiran Chen 001; Hai Li 001; Seung-Hyuk Kang; Xiaochun Zhu; Wenqing Wu (CICC, 2011)

Device-architecture co-optimization of STT-RAM based memory for low power embedded systems. - Cong Xu 002; Dimin Niu; Xiaochun Zhu; Seung-Hyuk Kang; Matt Nowak; Yuan Xie 001 (ICCAD, 2011)

MTJ based non-volatile flip-flop in deep submicron technology. - Youngdon Jung; Jisu Kim; Kyungho Ryu; Seong-Ook Jung; Jung Pill Kim; Seung-Hyuk Kang (ISOCC, 2011)

Sensing margin trend with technology scaling in MRAM. - Jee-Hwan Song; Jisu Kim; Seung-Hyuk Kang; Sei-Seung Yoon; Seong-Ook Jung (Int. J. Circuit Theory Appl., 2011)

Probabilistically Programmed STT-MRAM. - Wenqing Wu; Xiaochun Zhu; Seung-Hyuk Kang; Kendrick Yuen; Rob Gilmore (IEEE J. Emerg. Sel. Topics Circuits Syst., 2012)

A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM). - Jisu Kim; Kyungho Ryu; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2012)

A Magnetic Tunnel Junction Based Zero Standby Leakage Current Retention Flip-Flop. - Kyungho Ryu; Jisu Kim; Jiwan Jung; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2012)

CD-ECC: content-dependent error correction codes for combating asymmetric nonvolatile memory operation errors. - Wujie Wen; Mengjie Mao; Xiaochun Zhu; Seung-Hyuk Kang; Danghui Wang; Yiran Chen 001 (ICCAD, 2013)

A comparative study of STT-MTJ based non-volatile flip-flops. - Taehui Na; Kyungho Ryu; Jisu Kim; Seung-Hyuk Kang; Seong-Ook Jung (ISCAS, 2013)

High-performance low-power magnetic tunnel junction based non-volatile flip-flop. - Taehui Na; Kyungho Ryu; Jisu Kim; Seong-Ook Jung; Jung Pill Kim; Seung-Hyuk Kang (ISCAS, 2014)

Unified embedded non-volatile memory for emerging mobile markets. - Kangho Lee; Jimmy J. Kan; Seung-Hyuk Kang (ISLPED, 2014)

An MTJ-based non-volatile flip-flop for high-performance SoC. - Youngdon Jung; Jisu Kim; Kyungho Ryu; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (Int. J. Circuit Theory Appl., 2014)

A Split-Path Sensing Circuit for Spin Torque Transfer MRAM. - Jisu Kim; Taehui Na; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2014)

Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM. - Taehui Na; Jisu Kim; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. I Regul. Pap., 2014)

STT-MRAM Sensing Circuit With Self-Body Biasing in Deep Submicron Technologies. - Jisu Kim; Kyungho Ryu; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2014)

An Offset-Canceling Triple-Stage Sensing Circuit for Deep Submicrometer STT-RAM. - Taehui Na; Jisu Kim; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2014)

Efficiency analysis of importance sampling in deep submicron STT-RAM design using uncontrollable industry-compatible model parameter. - Taehui Na; Hanwool Jeong; Seong-Ook Jung; Jung Pill Kim; Seung-Hyuk Kang (ICECS, 2015)

Reference-circuit analysis for high-bandwidth spin transfer torque random access memory. - Byungkyu Song; Taehui Na; Seong-Ook Jung; Jung Pill Kim; Seung-Hyuk Kang (ISLPED, 2015)

A Double-Sensing-Margin Offset-Canceling Dual-Stage Sensing Circuit for Resistive Nonvolatile Memory. - Taehui Na; Jisu Kim; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2015)

Latch Offset Cancellation Sense Amplifier for Deep Submicrometer STT-RAM. - Byungkyu Song; Taehui Na; Jisu Kim; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. I Regul. Pap., 2015)

Impact of Write Pulse and Process Variation on 22 nm FinFET-Based STT-RAM Design: A Device-Architecture Co-Optimization Approach. - Cong Xu 002; Yang Zheng; Dimin Niu; Xiaochun Zhu; Seung-Hyuk Kang; Yuan Xie 001 (IEEE Trans. Multi Scale Comput. Syst., 2015)

Architecture design with STT-RAM: Opportunities and challenges. - Ping Chi; Shuangchen Li; Yuanqing Cheng; Yu Lu; Seung-Hyuk Kang; Yuan Xie 001 (ASP-DAC, 2016)

Area-optimal sensing circuit designs in deep submicrometer STT-RAM. - Sara Choi; Taehui Na; Seong-Ook Jung; Jung Pill Kim; Seung-Hyuk Kang (ISCAS, 2016)

Equalization scheme analysis for high-density spin transfer torque random access memory. - Beomsang Yoo; Taehui Na; Byungkyu Song; Seong-Ook Jung; Jung Pill Kim; Seung-Hyuk Kang (ISOCC, 2016)

Read Disturbance Reduction Technique for Offset-Canceling Dual-Stage Sensing Circuits in Deep Submicrometer STT-RAM. - Taehui Na; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2016)

Corner-Aware Dynamic Gate Voltage Scheme to Achieve High Read Yield in STT-RAM. - Sara Choi; Taehui Na; Jisu Kim; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2016)

Multiple-Cell Reference Scheme for Narrow Reference Resistance Distribution in Deep Submicrometer STT-RAM. - Taehui Na; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2016)

An Offset-Tolerant Dual-Reference-Voltage Sensing Scheme for Deep Submicrometer STT-RAM. - Taehui Na; Jisu Kim; Byungkyu Song; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2016)

Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS. - Taehui Na; Byungkyu Song; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE J. Solid State Circuits, 2017)

A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and a Compact Area. - Byungkyu Song; Taehui Na; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2017)

Data-Cell-Variation-Tolerant Dual-Mode Sensing Scheme for Deep Submicrometer STT-RAM. - Taehui Na; Byungkyu Song; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. I Regul. Pap., 2018)

An Adaptive 3T-3MTJ Memory Cell Design for STT-MRAM-Based LLCs. - Linuo Xue; Bi Wu; Beibei Zhang; Yuanqing Cheng; Peiyuan Wang; Chando Park; Jimmy J. Kan; Seung-Hyuk Kang; Yuan Xie 001 (IEEE Trans. Very Large Scale Integr. Syst., 2018)

Offset-Cancellation Sensing-Circuit-Based Nonvolatile Flip-Flop Operating in Near-Threshold Voltage Region. - Byungkyu Song; Sara Choi; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. I Regul. Pap., 2019)

A Decoder for Short BCH Codes With High Decoding Efficiency and Low Power for Emerging Memories. - Sara Choi; Hong Keun Ahn; Byungkyu Song; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2019)

Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS. - Taehui Na; Byungkyu Song; Sara Choi; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2019)

Self-Referenced Single-Ended Resistance Monitoring Write Termination Scheme for STT-RAM Write Energy Reduction. - Sara Choi; Hong Keun Ahn; Byungkyu Song; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. I Regul. Pap., 2021)

STT-MRAM Sensing: A Review. - Taehui Na; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2021)

Environmental-Variation-Tolerant Magnetic Tunnel Junction-Based Physical Unclonable Function Cell With Auto Write-Back Technique. - Byungkyu Song; Sehee Lim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Inf. Forensics Secur., 2021)