A small sized lateral trench electrode IGBT having improved latch-up and breakdown characteristics for power IC system. - Ey Goo Kang; Seung Hyun Moon; Man Young Sung (ICECS, 2001)

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate. - Doo-Hyun Kim; Hyunggon Kim; Sung-Won Yun; Youngsun Song; Jisu Kim; Sung-Min Joe; Kyung-Hwa Kang; Joonsuc Jang; Hyun-Jun Yoon; Kangbin Lee; Minseok Kim; Joonsoo Kwon; et al. (ISSCC, 2020)

A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface. - Jiho Cho; D. Chris Kang; Jongyeol Park; Sangwan Nam; Jung-Ho Song; Bong-Kil Jung; Jaedoeg Lyu; Hogil Lee; Won-Tae Kim 004; Hongsoo Jeon; Sunghoon Kim 001; In-Mo Kim; et al. (ISSCC, 2021)

A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface. - Moosung Kim; Sung-Won Yun; Jungjune Park; Hyun Kook Park; Jungyu Lee 002; Yeong Seon Kim; Dae-Hoon Na; Sara Choi; Youngsun Song; Jonghoon Lee; Hyun-Jun Yoon; Kangbin Lee; et al. (ISSCC, 2022)