5.5 A 2.1e- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology. - Jaekyu Lee; Seung Sik Kim; In-Gyu Baek; Heesung Shim; Taehoon Kim; Taehyoung Kim; Jungchan Kyoung; Dongmo Im; Jinyong Choi; KeunYeong Cho; Daehoon Kim; Haemin Lim; et al. (ISSCC, 2020)

6.1 A 3-Stacked Hybrid-Shutter CMOS Image Sensor with Switchable 1.2µm -Pitch 50Mpixel Rolling Shutter and 2.4µm -Pitch 12.5Mpixel Global Shutter Modes for Mobile Applications. - Heesung Shim; Seung Sik Kim; Min-Woong Seo; Sangsu Park; Hyukbin Kwon; Yongjun Kim; Sanggwon Lee; Sungbong Park; Daehee Bae; Si Gyoung Koo; Masamichi Ito; Jae-hoon Jeon; et al. (ISSCC, 2025)