A 2.5Gb/s/pin 256Mb GDDR3 SDRAM with Series Pipelined CAS Latency Control and Dual-Loop Digital DLL. - Dong-Uk Lee; Hyun-Woo Lee; Ki Chang Kwean; Young-Kyoung Choi; Hyong Uk Moon; Seung-Wook Kwack; Shin-Deok Kang; Kwan-Weon Kim; Yong Ju Kim; Young-Jung Choi; Patrick B. Moran; Jin-Hong Ahn; et al. (ISSCC, 2006)

Multi-Slew-Rate Output Driver and Optimized Impedance-Calibration Circuit for 66nm 3.0Gb/s/pin DRAM Interface. - Dong-Uk Lee; Shin-Deok Kang; Nak-Kyu Park; Hyun-Woo Lee; Young-Kyoung Choi; Jung-Woo Lee; Seung-Wook Kwack; Hyeong-Ouk Lee; Won-Joo Yun; Sang-Hoon Shin; Kwan-Weon Kim; Young-Jung Choi; et al. (ISSCC, 2008)

A 0.1-to-1.5GHz 4.2mW All-Digital DLL with Dual Duty-Cycle Correction Circuit and Update Gear Circuit for DRAM in 66nm CMOS Technology. - Won-Joo Yun; Hyun-Woo Lee; Dongsuk Shin; Shin-Deok Kang; Ji-Yeon Yang; Hyeng-Ouk Lee; Dong-Uk Lee; Sujeong Sim; Young-Ju Kim 001; Won-Jun Choi; Keun-Soo Song; Sang-Hoon Shin; et al. (ISSCC, 2008)

A 1.6V 3.3Gb/s GDDR3 DRAM with dual-mode phase- and delay-locked loop using power-noise management with unregulated power supply in 54nm CMOS. - Hyun-Woo Lee; Won-Joo Yun; Young-Kyoung Choi; Hyang-Hwa Choi; Jong-Jin Lee; Ki-Han Kim; Shin-Deok Kang; Ji-Yeon Yang; Jae-Suck Kang; Hyeng-Ouk Lee; Dong-Uk Lee; Sujeong Sim; et al. (ISSCC, 2009)

A high speed graphics DRAM with low power and low noise data bus inversion in 54nm CMOS. - Seung-Wook Kwack; Kae-Dal Kwack (IEICE Electron. Express, 2009)

25.3 A 1.35V 5.0Gb/s/pin GDDR5M with 5.4mW standby power and an error-adaptive duty-cycle corrector. - Hyun-Woo Lee; Junyoung Song; Sangah Hyun; Seunggeun Baek; Yuri Lim; Jungwan Lee; Minsu Park; Haerang Choi; Changkyu Choi; Jin-Youp Cha; Jaeil Kim; Hoon Choi; et al. (ISSCC, 2014)