Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges. - Jae-Gil Lee; Joongsik Kim; Dong Ik Suh; Ildo Kim; Gwon Deok Han; Seung Wook Ryu; Seho Lee; Myung-Hee Na; Seonyong Cha; Hyeon Woo Park; Cheol Seong Hwang (IMW, 2022)

Demonstration of crystalline IGZO transistor with high thermal stability for memory applications. - Whayoung Kim; Jaehyeon Kim; Dongjin Ko; Jun-Hwe Cha; Gyeongcheol Park; Youngbae Ahn; Jong-Young Lee; Minchul Sung; Hyejung Choi; Seung Wook Ryu; Seiyon Kim; Myung-Hee Na; et al. (VLSI Technology and Circuits, 2023)

BEOL Compatible Ultra-Low Operating Voltage (0.5 V) and Preconfigured Switching Polarization States in Effective 3 nm Ferroelectric HZO Capacitors. - Minjong Lee; Jin-Hyun Kim; Dan N. Le; Seojun Lee; Si-Un Song; Rino Choi; Youngbae Ahn; Seung Wook Ryu; Pil-Ryung Cha; Chang-Yong Nam; Seongbin Park; Jongmug Kang; et al. (VLSI Technology and Circuits, 2024)