Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures. - Stephen A. Mancini; Seung Yup Jang; Zeyu Chen; Dongyoung Kim; Justin Lynch; Yafei Liu; Balaji Raghothamachar; Minseok Kang; Anant Agarwal; Nadeemullah Mahadik; Robert Stahlbush; Michael Dudley; et al. (IRPS, 2022)

Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs. - Dongyoung Kim; Skylar DeBoer; Stephen A. Mancini; Sundar Babu Isukapati; Justin Lynch; Nick Yun; Adam J. Morgan; Seung Yup Jang; Woongje Sung (IRPS, 2023)

Investigation of Screening Methods for 1.2 kV 4H-SiC MOSFETs Using High Gate Voltage Pulses and Unclampled Inductive Switching. - Seung Yup Jang; Justin Lynch; Adam J. Morgan; Dinuth C. Y. B. Yapa Mudiyanselage; Woongje Sung; Limeng Shi; Anant K. Agarwal (IRPS, 2025)