A 3nm 256Mb SRAM in FinFET Technology with New Array Banking Architecture and Write-Assist Circuitry Scheme for High-Density and Low-VMIN Applications. - Jonathan Chang; Yen-Huei Chen; Gary Chan; Kuo-Cheng Lin; Po-Sheng Wang; Yangsyu Lin; Sevic Chen; Peijiun Lin; Ching-Wei Wu; Chih-Yu Lin; Yi-Hsin Nien; Hidehiro Fujiwara; et al. (VLSI Technology and Circuits, 2023)