All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs. - Hao Xue; Towhidur Razzak; Seongmo Hwang; Antwon Coleman; Sanyam Bajaj; Yuewei Zhang; Zane Jamal-Eddin; Shahadat Hasan Sohel; Asif Khan 011; Siddharth Rajan; Wu Lu (DRC, 2018)

Epitaxial passivation of delta doped $ beta$ -Ga2O3 field effect transistors. - Chandan Joishi; Zhanbo Xia; Shahadat Hasan Sohel; Saurabh Lodha; Siddharth Rajan (DRC, 2019)

RF Performance of 130 nm Al0.75Ga0.25N/Al0.6Ga0.4N HFETs with MBE-Regrown Contacts. - Hao Xue; Choong Hee Lee; Kamal Hussian; Towhidur Razzak; Mamun Abdullah; Zhanbo Xia; Shahadat Hasan Sohel; Asif Khan 011; Siddharth Rajan; Wu Lu (DRC, 2019)