AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers. - Hsien-Chin Chiu; Shang-Cyun Chen; Jiun-Wei Chiu; Bo-Hong Li; Hou-Yu Wang; Li-Yi Peng; Hsiang-Chun Wang; Kuang-Po Hsueh (Microelectron. Reliab., 2018)