Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer. - Weichun Luo; Hong Yang; Wenwu Wang 006; Yefeng Xu; Bo Tang; Shangqing Ren; Hao Xu; Yanrong Wang; Luwei Qi; Jiang Yan; Huilong Zhu; Chao Zhao; et al. (Microelectron. Reliab., 2016)

Improved Performance of SRAM-Based True Random Number Generator by Leveraging Irradiation Exposure. - Xu Zhang; Chunsheng Jiang; Gang Dai 001; Le Zhong; Wen Fang; Ke Gu; Guoping Xiao; Shangqing Ren; Xin Liu; Sanyong Zou (Sensors, 2020)

Intelligent Inspection Guidance of Urethral Endoscopy Based on SLAM with Blood Vessel Attentional Features. - Jie Lin; Xiangyu Zeng; Yulong Pan; Shangqing Ren; Yige Bao (Cogn. Comput., 2024)