New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges during Readout. - Chang Su; Zhongxin Liang; Zhiyuan Fu; Shaodi Xu; Kaifeng Wang; Puyang Cai; Liang Chen; Ru Huang 001; Qianqian Huang (ESSDERC, 2023)