PBTI evaluation of In0.65Ga0.35As/In0.53Ga0.47As nanowire FETs with Al2O3 and LaAlO3 gate dielectrics. - Yun Li; K. L. Wang; Shaoyan Di; Peng Huang 004; Gang Du; Xiao-Yan Liu (IRPS, 2018)

Calibration of drift-diffusion model in quasi-ballistic transport region for FinFETs. - Lei Shen; Shaoyan Di; Longxiang Yin; Xiaoyan Liu; Gang Du (Sci. China Inf. Sci., 2018)

Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime. - Shaoyan Di; Lei Shen; Pengying Chang; Kai Zhao; Tiao Lu; Gang Du; Xiaoyan Liu (Sci. China Inf. Sci., 2019)