15.4 A 22nm 2Mb ReRAM Compute-in-Memory Macro with 121-28TOPS/W for Multibit MAC Computing for Tiny AI Edge Devices. - Cheng-Xin Xue; Tsung-Yuan Huang; Je-Syu Liu; Ting-Wei Chang; Hui-Yao Kao; Jing-Hong Wang; Ta-Wei Liu; Shih-Ying Wei; Sheng-Po Huang; Wei-Chen Wei; Yi-Ren Chen; Tzu-Hsiang Hsu; et al. (ISSCC, 2020)

A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices. - Cheng-Xin Xue; Je-Min Hung; Hui-Yao Kao; Yen-Hsiang Huang; Sheng-Po Huang; Fu-Chun Chang; Peng Chen; Ta-Wei Liu; Chuan-Jia Jhang; Chin-I Su; Win-San Khwa; Chung-Chuan Lo; et al. (ISSCC, 2021)

An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices. - Je-Min Hung; Yen-Hsiang Huang; Sheng-Po Huang; Fu-Chun Chang; Tai-Hao Wen; Chin-I Su; Win-San Khwa; Chung-Chuan Lo; Ren-Shuo Liu; Chih-Cheng Hsieh; Kea-Tiong Tang; Yu-Der Chih; et al. (ISSCC, 2022)

A 40-nm, 2M-Cell, 8b-Precision, Hybrid SLC-MLC PCM Computing-in-Memory Macro with 20.5 - 65.0TOPS/W for Tiny-Al Edge Devices. - Win-San Khwa; Yen-Cheng Chiu; Chuan-Jia Jhang; Sheng-Po Huang; Chun-Ying Lee; Tai-Hao Wen; Fu-Chun Chang; Shao-Ming Yu; Tung-Yin Lee; Meng-Fan Chang (ISSCC, 2022)

8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices. - Je-Min Hung; Tai-Hao Wen; Yen-Hsiang Huang; Sheng-Po Huang; Fu-Chun Chang; Chin-I Su; Win-San Khwa; Chung-Chuan Lo; Ren-Shuo Liu; Chih-Cheng Hsieh; Kea-Tiong Tang; Yu-Der Chih; et al. (IEEE J. Solid State Circuits, 2023)

15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 1012 Write Endurance and Integrated Margin-Expansion Schemes. - Ku-Feng Lin; Hiroki Noguchi; Yi-Chun Shih; Perng-Fei Yuh; Yuan-Jen Lee; Tung-Cheng Chang; Sheng-Po Huang; Yu-Fan Lin; Chun-Ying Lee; Yen-Hsiang Huang; Jui-Che Tsai; Saman Adham; et al. (ISSCC, 2024)